High thermal stability Ohmic contact for GaN-based devices
نویسندگان
چکیده
Co-integration of gallium nitride (GaN) power devices with Si logic ICs makes a way applying high and efficiency circuits on single chip. In order to co-integrate...
منابع مشابه
High-Reflectivity A1-Pt Nanostructured Ohmic Contact to p-GaN
The effect of nanoscale Pt islands on the electrical characteristics of contacts to p-type gallium nitride (GaN) has been investigated to explore the feasibility for the flip-chip configuration light-emitting diodes (LEDs) using an Al-based reflector. An as-deposited Al contact to p-GaN with a net hole concentration of 3 × 10 cm−3 was rectifying. However, an Al contact with nanoscale Pt islands...
متن کاملHigh-transparency Ni/Au ohmic contact to p-type GaN
In this study, a very thin Ni/Au bilayer metal film was prepared by electron beam evaporation and thermal alloying to form ohmic contact on p-type GaN film. After thermal alloying, the current– voltage (I – V) characteristic of Ni/Au contact on p-type GaN film exhibited ohmic behavior. The Ni/Au contacts showed a specific contact resistance of 1.7310 V cm at an alloying temperature of 450 °C. I...
متن کاملOptimization of Ohmic Contact Metallization Process for AlGaN/GaN High Electron Mobility Transistor
Copyright 2013 KIEEME. All rights reserved. This is an open-access article distributed under the terms of the Creative Commons Attribution Non-Commercial License (http://creativecommons.org/licenses/by-nc/3.0) which permits unrestricted noncommercial use, distribution, and reproduction in any medium, provided the original work is properly cited. Optimization of Ohmic Contact Metallization Proc...
متن کاملA Thermodynamic Approach to Ohmic Contact Formation to p-GaN
A new ohmic contact scheme for gallium nitride is presented. The use of Nitrideforming metal Over Gallide-forming metal, “NOG”, can modify the thermodynamic activity of N and Ga near the interface. This in turn can modify the near-surface point defect concentrations, particularly the vacancies of Ga and N. The principle of this contact scheme was shown to be consistent with results from Ni/Au, ...
متن کاملHigh resolution non-contact thermal characterization of semiconductor devices
Non-contact optical methods can be used for sub micron surface thermal characterization of active semiconductor devices. Point measurements were first made, and then real time thermal images were acquired with a specialized PINarray detector. This method of thermal imaging can have spatial resolution better than the diffraction limit of an infrared camera and can work in a wide range of ambient...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Nanoscale advances
سال: 2023
ISSN: ['2516-0230']
DOI: https://doi.org/10.1039/d3na00491k